共 35 条
- [1] ELECTRON-MICROSCOPY STUDY OF LASER RECRYSTALLIZED SOI STRUCTURES INSTITUTE OF PHYSICS CONFERENCE SERIES, 1988, (93): : 117 - 118
- [2] ELECTRON-MICROSCOPY STUDY OF LASER RECRYSTALLIZED SOI STRUCTURES EUREM 88, VOLS 1-3: TUTORIALS, INSTRUMENTATION AND TECHNIQUES / PHYSICS AND MATERIALS / BIOLOGY, 1988, 93 : 117 - 118
- [4] ELECTRON-MICROSCOPY CONTRAST OF SMALL DEFECT CLUSTERS IN ION-IRRADIATED COPPER PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1979, 40 (03): : 313 - 330
- [5] TRANSMISSION ELECTRON-MICROSCOPY OF SELF-ANNEALED ION-IMPLANTED SILICON JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (01): : L14 - L16
- [7] MEASUREMENT OF THE LOCAL THICKNESS OF CRYSTALS AND OBTAINING PROFILES OF DEFECT DISTRIBUTION ON DEGREES IN ION-ALLOYED SILICON LAYERS BY THE ELECTRON-MICROSCOPY METHOD ZHURNAL TEKHNICHESKOI FIZIKI, 1984, 54 (07): : 1330 - 1333
- [8] INVESTIGATION OF SURFACE-LAYERS OF ION-IMPLANTATION-DOPED SILICON BY MIRROR ELECTRON-MICROSCOPY SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (09): : 1131 - 1134
- [9] WEAK-BEAM ELECTRON-MICROSCOPY ANALYSIS OF DEFECT CLUSTERS IN HEAVY-ION IRRADIATED SILVER AND COPPER PHILOSOPHICAL MAGAZINE, 1974, 29 (04): : 813 - 828