ELECTRON-MICROSCOPY STUDY OF DEFECT STRUCTURES IN RECRYSTALLIZED AMORPHOUS LAYERS OF SELF-ION-IRRADIATED (111) SILICON

被引:33
|
作者
RECHTIN, MD [1 ]
PRONKO, PP [1 ]
FOTI, G [1 ]
CSEPREGI, L [1 ]
KENNEDY, EF [1 ]
MAYER, JW [1 ]
机构
[1] CALTECH,PASADENA,CA 91125
关键词
D O I
10.1080/01418617808239194
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:605 / 620
页数:16
相关论文
共 35 条
  • [31] High-resolution electron microscopy study of defect structures in γ-TiAl irradiated with 15 keV He ions in a high-voltage transmission electron microscope
    Song, MH
    Furuya, K
    Tanabe, T
    Noda, T
    JOURNAL OF ELECTRON MICROSCOPY, 1999, 48 (04): : 355 - 360
  • [32] THE COALESCENCE OF SILICON LAYERS GROWN OVER SIO2 BY LIQUID-PHASE EPITAXY .2. STRAINS AND DEFECT NUCLEATION STUDIED BY TRANSMISSION ELECTRON-MICROSCOPY
    BANHART, F
    NAGEL, N
    PHILLIPP, F
    CZECH, E
    SILIER, I
    BAUSER, E
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1993, 57 (05): : 441 - 448
  • [33] HIGH-RESOLUTION ELECTRON-MICROSCOPY STUDY OF SIGMA=3, [111] TWIN-BOUNDARY STRUCTURES IN ORDERED CU3AU
    RONGEN, PHH
    PENISSON, JM
    TICHELAAR, FD
    SCHAPINK, FW
    PHILOSOPHICAL MAGAZINE LETTERS, 1992, 66 (04) : 181 - 187
  • [34] A TRANSMISSION ELECTRON-MICROSCOPY STUDY OF THE CRYSTALLIZATION OF ION-BEAM-MIXED PD80SI20 AMORPHOUS THIN-FILMS
    JANICKI, AJ
    GIESSEN, BC
    GRUNDY, PJ
    THIN SOLID FILMS, 1988, 167 (1-2) : 141 - 147
  • [35] COMPARATIVE-STUDY OF THE EFFECT OF ANNEALING OF NITROGEN-IMPLANTED SILICON-ON-INSULATOR STRUCTURES BY SPECTROSCOPIC ELLIPSOMETRY, CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY AND RUTHERFORD BACKSCATTERING SPECTROSCOPY
    LOHNER, T
    SKORUPA, W
    FRIED, M
    VEDAM, K
    NGUYEN, N
    GROTZSCHEL, R
    BARTSCH, H
    GYULAI, J
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1992, 12 (1-2): : 177 - 184