ELECTRON-MICROSCOPY STUDY OF LASER RECRYSTALLIZED SOI STRUCTURES

被引：0
|
作者：
DEVEIRMAN, A [1 ]
WOUTERS, DJ [1 ]
VANHELLEMONT, J [1 ]
VANLANDUYT, J [1 ]
MAES, HE [1 ]
机构：
[1] INTERUNIV MICROELECTR CTR, B-3030 LOUVAIN, BELGIUM
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1988年 / 93期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Scanning, High Voltage and High Resolution Electron Microscopy can provide complementary information for the study of the crystal quality of laser recrystallised silicon films. The characterisation of different lattice defects and the correlation of crystal defects with crystal orientation changes are discussed.
引用
收藏
页码：117 / 118
页数：2
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