PROPERTIES OF RF SPUTTERED HYDROGENATED AMORPHOUS GERMANIUM-SILICON ALLOYS

被引：18

作者：

BANERJEE, PK ^{[1
]}

DUTTA, R ^{[1
]}

MITRA, SS ^{[1
]}

PAUL, DK ^{[1
]}

机构：

[1] HARVARD UNIV,GORDON MCKAY LAB,CAMBRIDGE,MA 02138

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1982年 / 50卷 / 01期

关键词：

D O I：

10.1016/0022-3093(82)90194-6

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1 / 11

页数：11

共 50 条

[21] HYDROGENATED AMORPHOUS-SILICON GERMANIUM ALLOYS PREPARED BY TRIODE RF GLOW-DISCHARGE
ICHIMURA, T
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[22] MOBILITY OF HOLES IN GERMANIUM-SILICON ALLOYS
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[23] MOBILITY OF ELECTRONS IN GERMANIUM-SILICON ALLOYS
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[24] SPUTTERED HYDROGENATED AMORPHOUS SILICON
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[25] MAGNETORESISTANCE AND MOBILITY OF GERMANIUM-SILICON ALLOYS
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[26] OPTICAL AND ELECTRONIC-PROPERTIES OF SPUTTERED HYDROGENATED AMORPHOUS SILICON-TIN ALLOYS
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[29] PROPERTIES OF MAGNETRON SPUTTERED HYDROGENATED AMORPHOUS-SILICON
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[30] DOPING EFFICIENCY IN RF-SPUTTERED HYDROGENATED AMORPHOUS-SILICON
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