QUENCHED-IN DEFECT REMOVAL THROUGH SILICIDE FORMATION BY RAPID THERMAL-PROCESSING

被引：13
|
作者：
MATHIOT, D
机构：
[1] Centre National d'Etudes des Telecommunications, C.N.E.T.-CNS, Chemin du Vieux Chêne, 38243 Meylan Cedex
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.104950
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a detailed study of the influence of TiSi2, silicidation the formation of the quenched-in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2 growth during RTP leads to a total removal of the defects, whereas the presence of TiSi2 by itself (without growth) has no influence. It is concluded that the defect removal is caused by the strong vacancy injection induced by the silicide growth.
引用
收藏
页码：131 / 133
页数：3
相关论文
共 50 条
  • [1] KINETICS OF TITANIUM SILICIDE FORMATION BY RAPID THERMAL-PROCESSING
    PAMLER, W
    WANGEMANN, K
    BENSCH, W
    BUSSMANN, E
    MITWALSKY, A
    FRESENIUS ZEITSCHRIFT FUR ANALYTISCHE CHEMIE, 1989, 333 (4-5): : 569 - 575
  • [2] PLATINUM SILICIDE FORMATION USING RAPID THERMAL-PROCESSING
    NAEM, AA
    JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) : 4161 - 4167
  • [3] FORMATION OF TITANIUM SILICIDE FILMS BY RAPID THERMAL-PROCESSING
    POWELL, RA
    CHOW, R
    THRIDANDAM, C
    FULKS, RT
    BLECH, IA
    PAN, JDT
    IEEE ELECTRON DEVICE LETTERS, 1983, 4 (10) : 380 - 382
  • [4] THE KINETICS OF SILICIDE FORMATION USING RAPID THERMAL-PROCESSING AND RELATED SILICON DEFECT BEHAVIOR
    MAEX, K
    DEKEERSMAECKER, R
    CLAEYS, C
    VANHELLEMONT, J
    ALKEMADE, P
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) : C101 - C101
  • [5] RAPID THERMAL-PROCESSING FOR SILICIDE TECHNOLOGY
    TSUKAMOTO, K
    SHIMIZU, M
    OKAMOTO, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C133 - C133
  • [6] KINETICS OF PLATINUM SILICIDE FORMATION DURING RAPID THERMAL-PROCESSING
    PANT, AK
    MURARKA, SP
    SHEPARD, C
    LANFORD, W
    JOURNAL OF APPLIED PHYSICS, 1992, 72 (05) : 1833 - 1836
  • [7] IN-PROCESS CONTROL OF SILICIDE FORMATION DURING RAPID THERMAL-PROCESSING
    DILHAC, JM
    GANIBAL, C
    NOLHIER, N
    MOYNAGH, PB
    CHEW, CP
    ROSSER, PJ
    APPLIED SURFACE SCIENCE, 1993, 63 (1-4) : 131 - 134
  • [8] PROCESS-CONTROL OF TITANIUM SILICIDE FORMATION USING RAPID THERMAL-PROCESSING
    KERMANI, A
    DEBOLSKE, T
    CROWLEY, J
    STULTZ, T
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4): : 633 - 637
  • [9] DEFECT-GUARDED RAPID THERMAL-PROCESSING
    NENYEI, Z
    WALK, H
    KNARR, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (06) : 1728 - 1733
  • [10] ON THE INITIAL-STAGES OF SILICIDE FORMATION IN LAYERED FILMS UNDER RAPID THERMAL-PROCESSING CONDITIONS
    NATAN, M
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1987, 42 (236): : 17 - 19
12345