QUENCHED-IN DEFECT REMOVAL THROUGH SILICIDE FORMATION BY RAPID THERMAL-PROCESSING

被引：13
|
作者：
MATHIOT, D
机构：
[1] Centre National d'Etudes des Telecommunications, C.N.E.T.-CNS, Chemin du Vieux Chêne, 38243 Meylan Cedex
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 02期
关键词：
D O I：
10.1063/1.104950
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a detailed study of the influence of TiSi2, silicidation the formation of the quenched-in defects usually created by rapid thermal processing (RTP). It is shown that TiSi2 growth during RTP leads to a total removal of the defects, whereas the presence of TiSi2 by itself (without growth) has no influence. It is concluded that the defect removal is caused by the strong vacancy injection induced by the silicide growth.
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页码：131 / 133
页数：3
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