P-N-JUNCTION DIODE MADE OF SEMICONDUCTING DIAMOND FILMS

被引：29
|
作者：
OKANO, K
KIYOTA, H
IWASAKI, T
KUROSU, T
IIDA, M
NAKAMURA, T
机构：
[1] Department of Electronics, School of Engineering, Tokai University, Hiratsuka, Kanagawa 259-12
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 08期
关键词：
D O I：
10.1063/1.104506
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A diamond p-n junction diode fabricated by the chemical vapor deposition technique, shows distinct rectification characteristics. From the electron beam induced current measurement, the existence of a depletion region or a space-charge region around the interface between the n- and p-type semiconducting diamond layers was identified.
引用
收藏
页码：840 / 841
页数：2
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