RESISTIVITY AND HIGH MAGNETIC-FIELD HALL-EFFECT MEASUREMENTS ON AS-GROWN P-TYPE HGZNTE

被引：2
|
作者：
FAJARDO, P
SANZMAUDES, J
RODRIGUEZ, T
GONZALEZ, MA
TRIBOULET, R
机构：
[1] FAC CIENCIAS FIS,DEPT FIS MAT,E-28040 MADRID,SPAIN
[2] CNRS,PHYS SOLIDES LAB,F-92195 MEUDON,FRANCE
来源：
JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(90)91098-B
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Resistivity and Hall coefficient of bulk p-type HgZnTe (x = 0.15) grown by THM have been measured as a function of magnetic field up to 7 T at different temperatures. The measured samples show mixed conduction behaviour, analogous to that observed in p-type HgCdTe. A three-band model that includes electrons, heavy holes and light holes is needed to explain the high magnetic field results. © 1989.
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页码：872 / 875
页数：4
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