MAGNETIC-FIELD DEPENDENCE OF QUANTIZED HALL-EFFECT BREAKDOWN VOLTAGES

被引:12
|
作者
CAGE, ME
机构
[1] Electr. Div., Nat. Inst. of Stand. and Technol., Gaithersburg, MD
关键词
D O I
10.1088/0268-1242/7/8/017
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
When large currents are passed through a high-quality quantized Hall resistance device, the voltage drop along the device is observed to assume discrete, quantized states when plotted against the magnetic field. These quantized voltage states are interpreted as occurring when electrons are excited to higher Landau levels and then return to the original Landau level. The quantization is found to be a function of magnetic field, and consequently can be more difficult to verify and determine than previously suspected.
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页码:1119 / 1122
页数:4
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