HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODIODES WITH ER-DOPED GAAS

被引：14
|
作者：
SETHI, S
BROCK, T
BHATTACHARYA, PK
KIM, J
WILLIAMSON, S
CRAIG, D
NEES, J
机构：
[1] Department of Electrical Engineering and Computer Science, University of Michigan, MI 48109, Ann Arbor
来源：
IEEE ELECTRON DEVICE LETTERS | 1995年 / 16卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/55.363239
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Very high-speed MSM photodiodes have been fabricated on Er-doped GaAs over a doping range of 10(18)-10(20) cm-3. The impulse response (characterized by photoconductive sampling) of these diodes, with finger widths/spacings of 2 mum, has been found to be tunable over a range of about 3 ps-22 ps. Electro-optic sampling was used to characterize MSM diodes with finger widths/spacings of 0.5 mum and 1 mum on a sample with [Er] = 10(19) cm-3, resulting in 3-dB bandwidths of 160 GHz and 140 GHz, respectively, corresponding to pulse widths of 2.7 ps and 3.3 ps. Correlation measurements were also done on the GaAs:Er samples, using an all-electronic Sampling Optical Temporal Analyzer (SOTA) structure.
引用
收藏
页码：106 / 108
页数：3
相关论文
共 50 条
  • [21] TRANSIT-TIME LIMITED RESPONSE OF GAAS METAL-SEMICONDUCTOR-METAL PHOTODIODES
    KLINGENSTEIN, M
    KUHL, J
    ROSENZWEIG, J
    MOGLESTUE, C
    AXMANN, A
    APPLIED PHYSICS LETTERS, 1991, 58 (22) : 2503 - 2505
  • [22] ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODIODES FABRICATED ON LOW-TEMPERATURE GAAS
    KLINGENSTEIN, M
    KUHL, J
    NOTZEL, R
    PLOOG, K
    ROSENZWEIG, J
    MOGLESTUE, C
    HULSMANN, A
    SCHNEIDER, J
    KOHLER, K
    APPLIED PHYSICS LETTERS, 1992, 60 (05) : 627 - 629
  • [23] HIGH-SPEED METAL-SEMICONDUCTOR-METAL WAVE-GUIDE PHOTODETECTOR ON INP
    SOOLE, JBD
    SCHUMACHER, H
    ESAGUI, R
    LEBLANC, HP
    BHAT, R
    KOZA, MA
    APPLIED PHYSICS LETTERS, 1989, 55 (21) : 2173 - 2175
  • [24] Design of high-speed Metal-Semiconductor-Metal Photodetectors by finger sizing optimization
    Hsiung, Kan-Lin
    2006 IEEE SARNOFF SYMPOSIUM, 2006, : 288 - 289
  • [25] InGaN Metal-Semiconductor-Metal Photodiodes with Nanostructures
    Ji, L.-W., 1600, Japan Society of Applied Physics (43):
  • [26] Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
    Bottcher, EH
    Droge, E
    Strittmatter, A
    ELECTRONICS LETTERS, 1997, 33 (10) : 912 - 914
  • [27] High-speed InGaAs metal-semiconductor-metal photodetectors with thin absorption layers
    Wohlmuth, WA
    Fay, P
    Vaccaro, K
    Martin, EA
    Adesida, I
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (05) : 654 - 656
  • [28] Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
    Carrano, JC
    Li, T
    Brown, DL
    Grudowski, PA
    Eiting, CJ
    Dupuis, RD
    Campbell, JC
    APPLIED PHYSICS LETTERS, 1998, 73 (17) : 2405 - 2407
  • [29] High-speed metal-semiconductor-metal photodetectors fabricated on SOI-substrates
    Honkanen, K.
    Hakkarainen, N.
    Määttä, K.
    Kilpelä, A.
    Kuivalainen, P.
    Physica Scripta T, 1999, 79 : 127 - 130
  • [30] InGaN metal-semiconductor-metal photodiodes with nanostructures
    Ji, LW
    Su, YK
    Chang, SJ
    Hung, SC
    Wang, CK
    Fang, TH
    Tsai, TY
    Chuang, R
    Su, W
    Zhong, JC
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2004, 43 (02): : 518 - 521
12345