Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN

被引：79

作者：

Carrano, JC ^{[1
]}

Li, T ^{[1
]}

Brown, DL ^{[1
]}

Grudowski, PA ^{[1
]}

Eiting, CJ ^{[1
]}

Dupuis, RD ^{[1
]}

Campbell, JC ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 17期

关键词：

D O I：

10.1063/1.122448

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the temporal and the frequency response of metal-semiconductor-metal ultraviolet photodetectors fabricated on single-crystal GaN. The best devices show a fast 10%-90% rise time of similar to 23 ps implying a bandwidth of >15 GHz. These time domain data have been corroborated by direct measurement of the power spectral content. From this a cutoff frequency, f (3dB), of similar to 16 GHz dB has been obtained. Analysis in terms of reverse bias and geometric scaling indicates that the photodetectors are transit-time limited. Modeling of the temporal behavior indicates that a slow component in the time and frequency response data is a consequence of the hole drift velocity. (C) 1998 American Institute of Physics. [S0003-6951(98)03043-5].

引用

页码：2405 / 2407

页数：3

共 50 条

[1] High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN
Appl Phys Lett, 5 (762):
[2] High-speed, low-noise metal-semiconductor-metal ultraviolet photodetectors based on GaN
Walker, D
Monroy, E
Kung, P
Wu, J
Hamilton, M
Sanchez, FJ
Diaz, J
Razeghi, M
APPLIED PHYSICS LETTERS, 1999, 74 (05) : 762 - 764
[3] SIMULATIONS FOR THE HIGH-SPEED RESPONSE OF GAN METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
JOSHI, RP
DHARAMSI, AN
MCADOO, J
APPLIED PHYSICS LETTERS, 1994, 64 (26) : 3611 - 3613
[4] High-speed metal-semiconductor-metal photodetectors fabricated on SOI-substrates
Honkanen, K.
Hakkarainen, N.
Määttä, K.
Kilpelä, A.
Kuivalainen, P.
Physica Scripta T, 1999, 79 : 127 - 130
[5] High-speed metal-semiconductor-metal photodetectors fabricated on SOI-substrates
Honkanen, K
Hakkarainen, N
Määttä, K
Kilpelä, A
Kuivalainen, P
PHYSICA SCRIPTA, 1999, T79 : 127 - 130
[6] High-speed, efficient metal-semiconductor-metal photodetectors
St. Collin
Pardo, F.
Averin, S. V.
Bardou, N.
Pelouard, J-L
QUANTUM ELECTRONICS, 2010, 40 (05) : 421 - 424
[7] OPTIMIZATION OF HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
BURM, J
LITVIN, KI
SCHAFF, WJ
EASTMAN, LF
IEEE PHOTONICS TECHNOLOGY LETTERS, 1994, 6 (06) : 722 - 724
[8] Very high-speed ultraviolet photodetectors fabricated on GaN
J. C. Carrano
T. Li
C. J. Eiting
R. D. Dupuis
J. C. Campbell
Journal of Electronic Materials, 1999, 28 : 325 - 333
[9] Very high-speed ultraviolet photodetectors fabricated on GaN
Carrano, JC
Li, T
Eiting, CJ
Dupuis, RD
Campbell, JC
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (03) : 325 - 333
[10] HIGH-SPEED INGAAS ON SI METAL-SEMICONDUCTOR-METAL PHOTODETECTORS
DROGE, E
SCHANBEL, RF
BOTTCHER, EH
GRUNDMANN, M
KROST, A
BIMBERG, D
ELECTRONICS LETTERS, 1994, 30 (16) : 1348 - 1350

← 1 2 3 4 5 →