RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES

被引：0
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作者：
ZHDAN, AG
LIFSHITS, TM
RYLKOV, VV
SHAFRAN, AG
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来源：
SEMICONDUCTORS | 1993年 / 27卷 / 05期
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中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：465 / 467
页数：3
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