RESONANCES IN THE TEMPERATURE-DEPENDENCE OF THE ELECTRICAL-CONDUCTIVITY OF DOPED SILICON DUE TO EXCITED IMPURITY STATES

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作者：

ZHDAN, AG

LIFSHITS, TM

RYLKOV, VV

SHAFRAN, AG

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SEMICONDUCTORS | 1993年 / 27卷 / 05期

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O469 [凝聚态物理学];

学科分类号：

070205 ;

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页码：465 / 467

页数：3

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