ATOMIC-STRUCTURE OF CAF2/SI(111) INTERFACE AND DEFECT FORMATION ON CAF2(111) SURFACE BY ELECTRON-IRRADIATION

被引：9
|
作者：
MIURA, K
SUGIURA, K
SOUDA, R
AIZAWA, T
OSHIMA, C
ISHIZAWA, Y
机构：
[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN
[2] WASEDA UNIV,FAC SCI & ENGN,SHINJU KU,TOKYO 160,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词：
CAF2/SI(111); INTERFACE; DEFECT; CAF2(111); ION SCATTERING SPECTROSCOPY; ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION;
D O I：
10.1143/JJAP.30.809
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy ion scattering spectroscopy (ISS) and low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400-degrees-C.
引用
收藏
页码：809 / 813
页数：5
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