ATOMIC-STRUCTURE OF CAF2/SI(111) INTERFACE AND DEFECT FORMATION ON CAF2(111) SURFACE BY ELECTRON-IRRADIATION

被引：9

作者：

MIURA, K

SUGIURA, K

SOUDA, R

AIZAWA, T

OSHIMA, C

ISHIZAWA, Y

机构：

[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN

[2] WASEDA UNIV,FAC SCI & ENGN,SHINJU KU,TOKYO 160,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期

关键词：

CAF2/SI(111); INTERFACE; DEFECT; CAF2(111); ION SCATTERING SPECTROSCOPY; ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION;

D O I：

10.1143/JJAP.30.809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy ion scattering spectroscopy (ISS) and low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400-degrees-C.

引用

页码：809 / 813

页数：5

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