ATOMIC-STRUCTURE OF CAF2/SI(111) INTERFACE AND DEFECT FORMATION ON CAF2(111) SURFACE BY ELECTRON-IRRADIATION

被引：9
|
作者：
MIURA, K
SUGIURA, K
SOUDA, R
AIZAWA, T
OSHIMA, C
ISHIZAWA, Y
机构：
[1] NATL INST RES INORGAN MAT,TSUKUBA,IBARAKI 305,JAPAN
[2] WASEDA UNIV,FAC SCI & ENGN,SHINJU KU,TOKYO 160,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 04期
关键词：
CAF2/SI(111); INTERFACE; DEFECT; CAF2(111); ION SCATTERING SPECTROSCOPY; ENERGY LOSS SPECTROSCOPY; ELECTRON IRRADIATION;
D O I：
10.1143/JJAP.30.809
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Atomic and electronic structures of the CaF2/Si(111) interface and the desorption mechanism of F from epitaxial CaF2(111) films produced by electron irradiation have been studied by low-energy ion scattering spectroscopy (ISS) and low-energy electron energy loss spectroscopy (EELS). The interface is formed by the desorption of F and becomes metallic. The F at the surface of epitaxial CaF2(111) films desorbs by electron irradiation, and the surface after F-desorption becomes metallic. The metallic surface reverts to the bulk electronic state before electron irradiation by annealing at about 400-degrees-C.
引用
收藏
页码：809 / 813
页数：5
相关论文
共 50 条
  • [1] Atomic structure of CaF2/Si(111) interface and defect formation on CaF2(111) surface by electron irradiation
    Miura, Kouji, 1600, (30):
  • [2] INITIAL ATOMIC-STRUCTURE OF CAF2/SI(111) INTERFACE FORMATION
    MIURA, K
    SOUDA, R
    AIZAWA, T
    OSHIMA, C
    ISHIZAWA, Y
    SOLID STATE COMMUNICATIONS, 1989, 72 (06) : 605 - 608
  • [3] ATOMIC-STRUCTURE AND INTERFACE STATES AT CAF2/SI (111)
    FUJITANI, H
    ASANO, S
    FUJITSU SCIENTIFIC & TECHNICAL JOURNAL, 1991, 27 (03): : 260 - 269
  • [4] STRUCTURE OF THE SI(111)-CAF2 INTERFACE
    TROMP, RM
    REUTER, MC
    PHYSICAL REVIEW LETTERS, 1988, 61 (15) : 1756 - 1759
  • [5] STRUCTURE OF THE SI(111)/CAF2 INTERFACE
    TROMP, RM
    REUTER, MC
    LEGOUES, FK
    KRAKOW, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (03): : 1910 - 1913
  • [6] Atomic structure and interface states at CaF2/Si (111)
    Fujitani, Hideaki, 1600, (27):
  • [7] Structure of CaF2/Si(111) long interface
    Itoh, Y
    Takahashi, I
    Ichimiya, A
    Harada, J
    Sokolov, NS
    JOURNAL OF CRYSTAL GROWTH, 1996, 166 (1-4) : 61 - 66
  • [8] STRUCTURE AND BONDING AT THE CAF2/SI (111) INTERFACE
    HIMPSEL, FJ
    HILLEBRECHT, FU
    HUGHES, G
    JORDAN, JL
    KARLSSON, UO
    MCFEELY, FR
    MORAR, JF
    RIEGER, D
    APPLIED PHYSICS LETTERS, 1986, 48 (09) : 596 - 598
  • [9] Effects of electron irradiation on the structure and morphology of CaF2/Si(111)
    Wollschläger, J
    Hildebrandt, T
    Kayser, R
    Viernow, J
    Klust, A
    Bätjer, J
    Hille, A
    Schmidt, T
    Falta, J
    APPLIED SURFACE SCIENCE, 2000, 162 : 309 - 318
  • [10] ELECTRONIC-STRUCTURE OF THE CAF2/SI(111) INTERFACE
    RIEGER, D
    HIMPSEL, FJ
    KARLSSON, UO
    MCFEELY, FR
    MORAR, JF
    YARMOFF, JA
    PHYSICAL REVIEW B, 1986, 34 (10): : 7295 - 7306
12345