SURFACE-DIFFUSION OF AL AND GA ATOMS ON GAAS (001) AND (111)B VICINAL SURFACES IN MOLECULAR-BEAM EPITAXY

被引：14

作者：

TANAKA, M

SUZUKI, T

NISHINAGA, T

机构：

[1] Department of Electronic Engineering, Faculty of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo, 113

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90965-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have measured the critical temperature where the growth mode transition between step-flow and 2D nucleation takes place by RHEED measurements during the molecular beam epitaxial growth of GaAs and AlAs on (001) and (111)B GaAs vicinal surfaces. Combining the experimental results with our theory and taking into account the surface diffusion and supersaturation ratio of adatoms on the terraces, the intrinsic surface diffusion length lambda-s of Al and Ga atoms is estimated on both (001) and (111)B GaAs vicinal surfaces with various misorientation directions.

引用

页码：168 / 172

页数：5

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