THE USE OF SI AND BE IMPURITIES FOR NOVEL PERIODIC DOPING STRUCTURES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：116
|
作者：
PLOOG, K
FISCHER, A
KUNZEL, H
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 02期
关键词：
D O I：
10.1149/1.2127430
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：400 / 410
页数：11
相关论文
共 50 条
  • [1] ORIENTATION DEPENDENCE OF THE SI DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    PAVESI, L
    PIAZZA, F
    HENINI, M
    HARRISON, I
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (02) : 167 - 171
  • [2] SELENIUM DOPING IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    SANO, ET
    HORIKOSHI, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1994, 33 (10): : 5636 - 5639
  • [3] USE OF SNTE AS THE SOURCE OF DONOR IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    COLLINS, DM
    [J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 67 - 70
  • [4] EVIDENCE OF ISOVALENT IMPURITIES IN GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    LEROUX, M
    NEU, G
    CONTOUR, JP
    MASSIES, J
    VERIE, C
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (08) : 2996 - 2998
  • [5] PROPERTIES OF GAAS ON SI GROWN BY MOLECULAR-BEAM EPITAXY
    HOUDRE, R
    MORKOC, H
    [J]. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1990, 16 (02) : 91 - 114
  • [6] PHOTODETECTORS FABRICATED ON HETEROEPITAXIAL GAAS/SI STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
    PAPANICOLAOU, NA
    ANDERSON, GW
    MODOLO, JA
    GEORGAKILAS, A
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (03) : 273 - 278
  • [7] ISOELECTRONIC DOPING IN GAAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    LEE, MK
    CHIU, TH
    DAYEM, A
    AGYEKUM, E
    [J]. APPLIED PHYSICS LETTERS, 1988, 53 (26) : 2653 - 2655
  • [8] ELECTROCHEMICAL SULFUR DOPING OF GAAS GROWN BY MOLECULAR-BEAM EPITAXY
    DAVIES, GJ
    ANDREWS, DA
    HECKINGBOTTOM, R
    [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7214 - 7218
  • [9] COEVAPORATION PHOSPHORUS DOPING IN SI GROWN BY MOLECULAR-BEAM EPITAXY
    KUBIAK, RAA
    PATEL, G
    LEONG, WY
    HOUGHTON, R
    PARKER, EHC
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1986, 41 (03): : 233 - 235
  • [10] PHOTOCONDUCTIVITY AND PHOTOLUMINESCENCE OF GAAS GROWN ON SI BY MOLECULAR-BEAM EPITAXY
    BERNIER, G
    BEERENS, J
    DEBOECK, J
    DENEFFE, K
    VANHOOF, C
    BORGHS, G
    [J]. SOLID STATE COMMUNICATIONS, 1989, 69 (07) : 727 - 731
12345