GENERATION OF SIO2 INTERFACE STATES AT LOW-TEMPERATURE WITH IONIZING IRRADIATION

被引：6
|
作者：
BLUZER, N
AFFINITO, D
BLAHA, FC
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1981年 / 28卷 / 06期
关键词：
D O I：
10.1109/TNS.1981.4335677
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：4074 / 4079
页数：6
相关论文
共 50 条
  • [41] LOW-TEMPERATURE PYROLYTIC DEPOSITION OF HIGH-QUALITY SIO2
    BENNETT, BR
    LORENZO, JP
    VACCARO, K
    DAVIS, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (10) : 2517 - 2521
  • [42] Low-temperature atomic hydrogen treatment of SiO2/Si structures
    Zhang, H
    Kumagai, A
    Xu, G
    Ishibashi, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6252 - 6255
  • [43] ELECTRICAL-PROPERTIES OF LOW-TEMPERATURE PYROLYTIC SIO2 ON INP
    BENNETT, BR
    LORENZO, JP
    VACCARO, K
    ELECTRONICS LETTERS, 1988, 24 (03) : 172 - 173
  • [44] Intrinsic SiC/SiO2 interface states
    Afanas'ev, VV
    Bassler, M
    Pensl, G
    Schulz, M
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1997, 162 (01): : 321 - 337
  • [45] Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures
    N. I. Bochkareva
    S. A. Khorev
    Semiconductors, 2000, 34 : 1177 - 1182
  • [46] Effect of low-temperature interphase charge transport at the Si/SiO2 interface on the photoresponse of silicon barrier structures
    Bochkareva, NI
    Khorev, SA
    SEMICONDUCTORS, 2000, 34 (10) : 1177 - 1182
  • [47] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE
    TROMP, R
    RUBLOFF, GW
    BALK, P
    LEGOUES, FK
    VANLOENEN, EJ
    PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335
  • [48] HIGH-TEMPERATURE DECOMPOSITION OF SIO2 AT THE SI/SIO2 INTERFACE
    RUBLOFF, GW
    TROMP, RM
    VANLOENEN, EJ
    BALK, P
    LEGOUES, FK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1024 - 1025
  • [49] THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE
    FISCHETTI, MV
    WEINBERG, ZA
    CALISE, JA
    JOURNAL OF APPLIED PHYSICS, 1985, 57 (02) : 418 - 425
  • [50] LOW-TEMPERATURE IRRADIATION EFFECTS IN SIO2-INSULATED MIS DEVICES
    HARARI, E
    WANG, S
    ROYCE, BSH
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1310 - 1317
12345