CHARACTERIZATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS BY LOCALIZED FILTERED LOW-TEMPERATURE CATHODOLUMINESCENCE

被引：0

|

作者：

DUBONCHEVALLIER, C

PAPADOPOULO, AC

BRESSE, JF

BRICARD, L

机构：

来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：313 / 316

页数：4

相关论文

共 50 条

[1] CHARACTERIZATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS BY LOCALIZED FILTERED LOW-TEMPERATURE CATHODOLUMINESCENCE
DUBONCHEVALLIER, C
PAPADOPOULO, AC
BRESSE, JF
BRICARD, L
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 313 - 316
[2] CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS BY LOCALIZED FILTERED LOW-TEMPERATURE CATHODOLUMINESCENCE
DUBONCHEVALLIER, C
PAPADOPOULO, AC
BRESSE, JF
DUCHENOIS, AM
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) : 2603 - 2607
[3] CATHODOLUMINESCENCE SPECTROSCOPY - AN ACCURATE TECHNIQUE FOR THE CHARACTERIZATION OF THE FABRICATION TECHNOLOGY OF GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
PAPADOPOULO, AC
DUBONCHEVALLIER, C
BRESSE, JF
[J]. SCANNING MICROSCOPY, 1992, 6 (01) : 97 - 103
[4] FABRICATION AND DC CHARACTERIZATION OF GAALAS/GAAS DOUBLE HETEROJUNCTION BIPOLAR-TRANSISTORS
MARTY, A
JAMAI, J
VANNEL, JP
FABRE, N
BAILBE, JP
DUHAMEL, N
DUBONCHEVALLIER, C
TASSELLI, J
[J]. SOLID-STATE ELECTRONICS, 1988, 31 (09) : 1375 - 1382
[5] LOW-TEMPERATURE OPERATION OF HETEROJUNCTION BIPOLAR-TRANSISTORS
EASTMAN, LF
TASKER, PJ
ASHIZAWA, Y
WICKS, G
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C428 - C428
[6] GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS - ISSUES AND PROSPECTS FOR APPLICATION
ASBECK, PM
CHANG, MCF
HIGGINS, JA
SHENG, NH
SULLIVAN, GJ
WANG, KC
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) : 2032 - 2042
[7] NUMERICAL-SIMULATION OF GAAS GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS
ASBECK, PM
MILLER, DL
ASATOURIAN, R
KIRKPATRICK, CG
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (12): : 403 - 406
[8] EMITTER EXCESS RESISTANCE IN GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
CAMPS, T
MARTY, A
TASSELLI, J
CAZARRE, A
BAILBE, JP
[J]. SOLID-STATE ELECTRONICS, 1994, 37 (12) : 1907 - 1911
[9] ELECTRICAL BEHAVIOR OF DOUBLE HETEROJUNCTION NPN GAALAS/GAAS/GAALAS BIPOLAR-TRANSISTORS
BAILBE, JP
MARTY, A
REY, G
TASSELLI, J
BOUYAHYAOUI, A
[J]. SOLID-STATE ELECTRONICS, 1985, 28 (06) : 627 - 638
[10] VERIFICATION OF THE CHARGE-CONTROL MODEL FOR GAALAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
TASSELLI, J
MARTY, A
BAILBE, JP
REY, G
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (09) : 919 - 923

← 1 2 3 4 5 →