CHARACTERIZATION OF GAAS/GAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS BY LOCALIZED FILTERED LOW-TEMPERATURE CATHODOLUMINESCENCE

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作者：

DUBONCHEVALLIER, C

PAPADOPOULO, AC

BRESSE, JF

BRICARD, L

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来源：

GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988 | 1989年

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中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

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页码：313 / 316

页数：4

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