HIGH-SPEED INP INGAAS PHOTODIODE ON SAPPHIRE SUBSTRATE PREPARED BY EPITAXIAL LIFT-OFF

被引：0
|
作者：
SCHUMACHER, H [1 ]
GMITTER, TJ [1 ]
LEBLANC, HP [1 ]
BHAT, R [1 ]
YABLONOVITCH, E [1 ]
KOZA, MA [1 ]
机构：
[1] BELLCORE,RED BANK,NJ 07701
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 11期
关键词：
D O I：
10.1109/16.43751
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：2625 / 2625
页数：1
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