GAAS SCHOTTKY PHOTODIODE FABRICATED ON GLASS SUBSTRATE USING EPITAXIAL LIFT-OFF TECHNIQUE

被引：5
|
作者：
KOBAYASHI, F
SEKIGUCHI, Y
机构：
[1] Optical Measurement Technology Development Co. Ltd, Musashino-shi, Tokyo, 180
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 7A期
关键词：
GAAS; GLASS; HETEROSTRUCTURE; HIGH SENSITIVITY; SCHOTTKY BARRIER; PHOTODIODE;
D O I：
10.1143/JJAP.31.L850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on a substrate-side-illuminated GaAs Schottky photodiode fabricated on a glass substrate using the epitaxial lift-off technique. An external quantum efficiency in excess of 70% was observed at a wavelength of 780 nm. This is approximately 1.6 times higher than that of a conventional photodiode which has an absorption layer of the same thickness and is illuminated through a semitransparent Schottky window.
引用
收藏
页码：L850 / L852
页数：3
相关论文
共 50 条
  • [1] DC AND RF PERFORMANCE OF GAAS-MESFET FABRICATED ON SILICON SUBSTRATE USING EPITAXIAL LIFT-OFF TECHNIQUE
    SHAH, DM
    CHAN, WK
    GMITTER, TJ
    FLOREZ, LT
    SCHUMACHER, H
    VANDERGAAG, BP
    [J]. ELECTRONICS LETTERS, 1990, 26 (22) : 1865 - 1866
  • [2] EPITAXIAL LIFT-OFF GAAS HEMTS
    SHAH, DM
    CHAN, WK
    CANEAU, C
    GMITTER, TJ
    SONG, JI
    HONG, BP
    MICELLI, PF
    DEROSA, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) : 1877 - 1881
  • [3] Epitaxial lift-off GaAs solar cell from a reusable GaAs substrate
    vanGeelen, A
    Hageman, PR
    Bauhuis, GJ
    vanRijsingen, PC
    Schmidt, P
    Giling, LJ
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 45 (1-3): : 162 - 171
  • [4] GaAs/Si tandem solar cell using epitaxial lift-off technique
    Taguchi, H
    Okada, N
    Soga, T
    Jimbo, T
    Umeno, M
    [J]. PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 769 - 772
  • [5] MESFET LIFT-OFF FROM GAAS SUBSTRATE TO GLASS HOST
    VANHOOF, C
    DERAEDT, W
    VANROSSUM, M
    BORGHS, G
    [J]. ELECTRONICS LETTERS, 1989, 25 (02) : 136 - 137
  • [6] High-quality GaAs on Si substrate by the epitaxial lift-off technique using SeS2
    Arokiaraj, J
    Soga, T
    Jimbo, T
    Umeno, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (24) : 3826 - 3828
  • [7] Epitaxial lift-off process for GaAs solar cell on Si substrate
    Taguchi, H
    Soga, T
    Jimbo, T
    [J]. SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2005, 85 (01) : 85 - 89
  • [8] LIFT-OFF LASER - GAAS ON GLASS
    POOL, R
    [J]. SCIENCE, 1989, 243 (4894) : 1009 - 1010
  • [9] Internal Electric Fields of Flexible GaAs Solar Cells Fabricated Using Epitaxial Lift-off
    So, Mo Geun
    Jo, Hyun Jun
    Park, Gyoung Du
    Shim, Jae-Jin
    Kim, Woo Kyoung
    Kim, Yeongho
    Lee, Sang Jun
    Kim, Jong Su
    [J]. APPLIED SCIENCE AND CONVERGENCE TECHNOLOGY, 2020, 29 (01): : 10 - 13
  • [10] Demonstration of Thin-Film GaN Schottky Diodes Fabricated with Epitaxial Lift-Off
    Wang, J.
    Youtsey, C.
    McCarthy, R.
    Reddy, R.
    Guido, L.
    Xie, A.
    Beam, E.
    Fay, P.
    [J]. 2016 74TH ANNUAL DEVICE RESEARCH CONFERENCE (DRC), 2016,
12345