PHOTOLUMINESCENCE STUDIES ON GAAS/GE/SI AND GAAS/SIGE/GE/SI HETEROSTRUCTURES AFTER ANNEALING AND HYDROGENATION

被引：1
|
作者：
KIM, DY
KANG, TW
KIM, TW
WANG, KL
BOJEN, WS
机构：
[1] DONGGUK UNIV,DEPT PHYS,SEOUL 100715,SOUTH KOREA
[2] KOREA ELECTR TECHNOL INST,SEMICONDUCTOR DEVICES LAB,SEOUL 135080,SOUTH KOREA
[3] KWANGWOON UNIV,DEPT PHYS,SEOUL 139701,SOUTH KOREA
[4] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1993年 / 139卷 / 02期
关键词：
D O I：
10.1002/pssa.2211390217
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Photoluminescence (PL) studies are performed on GaAs layers on Si substrates with Ge and SiGe/Ge buffers. The Ge acceptor-related free to bound emission peak at 1.45 eV was caused by Ge which outdiffused from the buffers during the growth. The tensile stress induced in the GaAs epitaxial layer increased after rapid thermal annealing, and returned to its residual value after subsequent atomic hydrogenation. The PL intensities of the neutral carbon acceptor-related emission increased due to the neutralization of carbon ions after hydrogenation. These results indicate that the crystallinity of the GaAs epilayer is improved after annealing and hydrogenation.
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页码：443 / 449
页数：7
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