Comparison of III-V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs

被引：1

作者：

Sushkov, A. A. ^{[1
]}

Pavlov, D. A. ^{[1
]}

Andrianov, A., I ^{[1
]}

Shengurov, V. G. ^{[1
]}

Denisov, S. A. ^{[1
]}

Chalkov, V. Yu ^{[1
]}

Kriukov, R. N. ^{[1
]}

Baidus, N., V ^{[1
]}

Yurasov, D., V ^{[2
]}

Rykov, A., V ^{[1
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod, Nizhnii Novgorod 603022, Russia

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2022年 / 56卷 / 02期

基金：

俄罗斯基础研究基金会;

关键词：

molecular-beam epitaxy; hot-wire chemical vapor deposition; silicon-on-insulator; III-V semiconductors; transmission electron microscopy; INGAAS/GAAS/ALGAAS LASER STRUCTURES; LAYERS; EPITAXY; MOCVD; SILICON;

D O I：

10.1134/S1063782622010171

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

III-V/Ge/Si(001), III-V/Ge/SOI(001), and III-V/GaAs(001) heterostructures are fabricated and investigated. The Ge buffer layer for the III-V/Ge/Si structure is grown by vapor deposition onto a Si(001) substrate via the decomposition of monogermane on a "hot wire". In the case of III-V/Ge/SOI, the Ge buffer layer is obtained on a SOI(001) substrate by molecular-beam epitaxy via two-stage growth. The III-V layers are grown by metalorganic chemical-vapor deposition. It is shown that Ge/SOI formed by molecular-beam epitaxy using two-stage growth allows the fabrication of III-V layers that are highly competitive with those formed on Ge/Si in terms of crystalline and optical quality.

引用

页码：122 / 133

页数：12

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