Optical Quenching of Photocurrent Oscillations in Cr-Doped GaAs

被引:2
|
作者
Lenczewski, P. [1 ]
Fortin, E. [1 ]
机构
[1] Univ Ottawa, Dept Phys, Ottawa, ON K1N 6N5, Canada
关键词
D O I
10.1002/pssa.19700030435
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K267 / K269
页数:3
相关论文
共 50 条
  • [21] STRESS DEPENDENCE OF THE THERMAL-CONDUCTIVITY OF CR-DOPED GAAS
    RAMDANE, A
    SALCE, B
    CHALLIS, LJ
    PHYSICAL REVIEW B, 1983, 27 (04): : 2554 - 2557
  • [22] PRECIPITATE IDENTIFICATION IN V-DOPED AND CR-DOPED LEC GROWN GAAS
    COCKAYNE, B
    MACEWAN, WR
    HARRIS, IR
    SMITH, NA
    JOURNAL OF CRYSTAL GROWTH, 1988, 88 (02) : 180 - 182
  • [23] OPTICAL QUENCHING OF PHOTOCURRENT IN KTAO3 DOPED WITH FE
    YAMAICHI, E
    AKISHIGE, Y
    OHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (07): : 867 - 870
  • [24] Optical and magnetic properties of Cr-doped ZnS nanocrystallites
    Zeng, Xiaoling
    Zhang, Jiye
    Huang, Feng
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (12)
  • [25] Microstructural, optical and electrical properties of Cr-doped ZnO
    Singh, Shubra
    Kumar, E. Senthil
    Rao, M. S. Ramachandra
    SCRIPTA MATERIALIA, 2008, 58 (10) : 866 - 869
  • [26] IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS
    FAVENNEC, PN
    HARIDON, HL
    APPLIED PHYSICS LETTERS, 1979, 35 (09) : 699 - 701
  • [27] ELECTRICAL AND PHOTOELECTRONIC PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS
    KITAHARA, K
    NAKAI, K
    SHIBATOMI, A
    OHKAWA, S
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) : 5339 - 5344
  • [28] TRUE MOBILITIES IN SEMI-INSULATING O-DOPED AND CR-DOPED GAAS
    LOOK, DC
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 174 - 174
  • [29] THERMAL-CONDUCTIVITY OF CR-DOPED GAAS AT LOW-TEMPERATURE
    VUILLERMOZ, PL
    LAUGIER, A
    MAI, C
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4623 - 4626
  • [30] Thermally induced optical bistability in Cr-doped Colquiriite crystals
    Noginov, MA
    Vondrova, M
    Lucas, BD
    PHYSICAL REVIEW B, 2002, 65 (03) : 1 - 8