IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS

被引：25

|

作者：

FAVENNEC, PN

HARIDON, HL

机构：

来源：

APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期

关键词：

D O I：

10.1063/1.91259

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：699 / 701

页数：3

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