IMPLANTATION OF SHALLOW IMPURITIES IN CR-DOPED SEMI-INSULATING GAAS

被引：25
|
作者：
FAVENNEC, PN
HARIDON, HL
机构：
来源：
APPLIED PHYSICS LETTERS | 1979年 / 35卷 / 09期
关键词：
D O I：
10.1063/1.91259
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：699 / 701
页数：3
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