A 15-nm-thick Pt buffer layer was deposited on a glass slide at temperature T(s)(Pt(buf)) ranging from 30 to 300-degrees-C by e-gun evaporation. Following the cooling in vacuum to ambient temperature, Co and Pt layers have been alternately deposited on it. Very large perpendicular anisotropy and coercivity have been obtained at T(s)(Pt(buf)) higher than 200-degrees-C. The (111) preferred orientation of the Co/Pt multilayer as well as the Pt buffer layer became more pronounced with elevating T(s)(Pt(buf)), to which the enhancement of perpendicular anisotropy with elevating T(s)(Pt(buf)) might be ascribable.
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lee, Tae Young
Won, Young Chan
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Won, Young Chan
Son, Dong Su
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Son, Dong Su
Lim, Sang Ho
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea
Lim, Sang Ho
Lee, Seong-Rae
论文数: 0引用数: 0
h-index: 0
机构:
Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South KoreaKorea Univ, Dept Nano Semicond Engn, Seoul 136713, South Korea