A CRITICAL-REVIEW OF VAPOR-PHASE DEPOSITION METHODS FOR FERROELECTRIC THIN-FILMS

被引：0
|
作者：
KINGON, AI [1 ]
AUCIOLLO, A [1 ]
LICHTENWALNER, D [1 ]
HSIEH, KY [1 ]
机构：
[1] MICROELECTR CTR N CAROLINA,RES TRIANGLE PK,NC
来源：
FERROELECTRICS | 1992年 / 133卷 / 1-4期
关键词：
D O I：
10.1080/00150199208217967
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：3 / 3
页数：1
相关论文
共 50 条
  • [21] POLYMER THIN-FILMS PREPARED BY VAPOR-DEPOSITION
    KUBONO, A
    OKUI, N
    PROGRESS IN POLYMER SCIENCE, 1994, 19 (03) : 389 - 438
  • [22] PHOTOCHEMICAL VAPOR-DEPOSITION OF ALUMINUM THIN-FILMS
    HANABUSA, M
    OIKAWA, A
    PENG, YC
    FURUNO, S
    IGUCHI, S
    LASER- AND PARTICLE-BEAM CHEMICAL PROCESSES ON SURFACES, 1989, 129 : 73 - 77
  • [23] CHEMICAL-VAPOR-DEPOSITION OF NITRIDE THIN-FILMS
    HOFFMAN, DM
    POLYHEDRON, 1994, 13 (08) : 1169 - 1179
  • [24] THE CHEMICAL VAPOR-DEPOSITION OF SILICON THIN-FILMS
    SCOTT, BA
    ESTES, RD
    BEACH, DB
    SILICON CHEMISTRY, 1988, : 367 - 375
  • [25] VAPOR-DEPOSITION OF THIN-FILMS OF DPPH AND BDPA
    HILL, EJ
    BURGESS, JH
    THIN SOLID FILMS, 1972, 11 (01) : 99 - &
  • [26] FERROELECTRIC THIN-FILMS
    TOSSELL, DA
    PATEL, A
    ADVANCED MATERIALS, 1992, 4 (12) : 816 - 818
  • [27] GROWTH OF MGTE AND ZN1-XMGXTE THIN-FILMS BY METALORGANIC VAPOR-PHASE EPITAXY
    QUHEN, B
    QUESADA, X
    KUHN, WS
    BOUREE, JE
    SVOB, L
    LUSSON, A
    GOROCHOV, O
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 1079 - 1080
  • [28] MONOMOLECULAR LAYERS AND THIN-FILMS OF SILANE COUPLING AGENTS BY VAPOR-PHASE ADSORPTION ON OXIDIZED ALUMINUM
    KURTH, DG
    BEIN, T
    JOURNAL OF PHYSICAL CHEMISTRY, 1992, 96 (16): : 6707 - 6712
  • [29] DEPOSITION OF FERROELECTRIC PZT THIN-FILMS BY PLANAR MULTITARGET SPUTTERING
    BRUCHHAUS, R
    HUBER, H
    PITZER, D
    WERSING, W
    FERROELECTRICS, 1992, 127 (1-4) : 137 - 142
  • [30] Vapor-phase synthesis of mesoporous silica thin films
    Nishiyama, N
    Tanaka, S
    Egashira, Y
    Oku, Y
    Ueyama, K
    CHEMISTRY OF MATERIALS, 2003, 15 (04) : 1006 - 1011
12345