TRANSVERSE MAGNETORESISTANCE - A NOVEL 2-TERMINAL METHOD FOR MEASURING THE CARRIER DENSITY AND MOBILITY OF A SEMICONDUCTOR LAYER

被引：19
|
作者：
LOWNEY, JR
THURBER, WR
SEILER, DG
机构：
[1] Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 22期
关键词：
D O I：
10.1063/1.111389
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The magnetic-field dependence of the two-terminal magnetoresistance that occurs in rectangularly shaped samples can be used to determine both the free-carrier density and the mobility of a semiconductor layer. An approximate equation for the magnetoresistance was derived for variable length-to-width ratio. This technique was used to determine the electron density and mobility of accumulation layers in n-type Hg0.8Cd0.2Te photoconductive infrared detectors at 6 and 77 K. It should be applicable to a wide variety of fabricated devices and allow significant improvements in processing methods and quality control.
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收藏
页码：3015 / 3017
页数：3
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  • [1] DETERMINATION OF CARRIER MOBILITY AND DENSITY IN THE SURFACE LAYER OF A SEMICONDUCTOR
    SUBASHCHIEV, VK
    POLTINNIKOV, SA
    [J]. SOVIET PHYSICS-SOLID STATE, 1960, 2 (06): : 1059 - 1066
  • [2] MEASURING METHOD FOR SHF IMPEDANCE FLUCTUATIONS OF ACTIVE 2-TERMINAL NETWORKS
    KARASEV, AS
    [J]. MEASUREMENT TECHNIQUES USSR, 1987, 30 (07): : 691 - 694
  • [3] HELICONS IN INTRINSIC INSB, A METHOD FOR MEASURING CARRIER DENSITY AND MOBILITY WITH HIGH ACCURACY
    HEIDEGGER, G
    HESS, HD
    HINSCH, H
    [J]. ZEITSCHRIFT FUR ANGEWANDTE PHYSIK, 1971, 31 (02): : 127 - +
  • [4] Anisotropic mobility and carrier dynamics in the β-type BEDT-TTF salts as studied by inter-layer transverse magnetoresistance
    Sugawara, Shigeharu
    Tamura, Masafumi
    [J]. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2013, 14 (04)
  • [5] METHOD FOR DETERMINING THE CARRIER CONCENTRATION AND MOBILITY PROFILES IN A CONDUCTING LAYER OF SEMICONDUCTOR ON A SEMIINSULATING SUBSTRATE
    KARAMYSHEV, VP
    LAVRISHCHEV, VP
    MURYLEVA, IV
    PANASENKO, PV
    [J]. SOVIET MICROELECTRONICS, 1989, 18 (01): : 6 - 10
  • [6] DETERMINATION OF THE CARRIER MOBILITY AND RESISTIVITY OF SEMICONDUCTOR-FILMS BY THE SPREADING MAGNETORESISTANCE METHOD IN WEAK AND STRONG MAGNETIC-FIELDS
    YAKUNIN, YI
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 684 - 685
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    EMELYANOV, AI
    SEROVA, FG
    YANKINA, AA
    AKVILEV, BV
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 951 - 952
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    AIRAPETYANTS, SV
    TARASOV, VD
    [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 150 - 151
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    Benjamin, Mark
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