Study of InAs/GaAs(001) nanoisland growth process by in-situ and real-time X-ray diffraction

被引：0
|
作者：
Takahasi, Masamitu [1 ]
Kaizu, Toshiyuki [1 ]
Mizuki, Jun'ichiro [1 ]
机构：
[1] Japan Atom Energy Res Inst, Synchrotron Radiat Res Ctr, 1-1-1 Koto, Mikazuki, Hyogo 6795148, Japan
来源：
E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2006年 / 4卷 / 426-430期
关键词：
X-ray scattering; diffraction; and reflection; Growth; Gallium arsenide; Indium arsenide; Nano-particles; quantum dots; and supra-molecules;
D O I：
10.1380/ejssnt.2006.426
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A monitoring technique for molecular beam epitaxial growth of InAs/GaAs(001) nanoislands is presented. With the help of a combination of synchrotron radiation and a two-dimensional X-ray detector, X-ray diffraction intensity mappings in the reciprocal space have been measured during growth at a rate of 9.6 s per frame. This method provides information on strain distribution and height of Stranski-Krastanov islands under the in situ condition. Because the use of X-rays is not hindered by ambient pressure, this technique is suitable for industry-oriented applications such as organometallic vapor-phase epitaxy as well.
引用
收藏
页码：426 / 430
页数：5
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