In Situ Real-Time X-Ray Diffraction During Thin Film Growth of Pentacene

被引：21
|
作者：
Watanabe, T. [1 ]
Hosokai, T. [1 ]
Koganezawa, T. [2 ]
Yoshimoto, N. [1 ]
机构：
[1] Iwate Univ, Grad Sch Engn, Morioka, Iwate 0208551, Japan
[2] Japan Synchrotron Radiat Res Inst, Sayo, Hyogo 6795198, Japan
来源：
MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2012年 / 566卷
关键词：
X-ray diffraction; Thin film growth; Organic semiconductor; Structural analysis; 2D-GIXD;
D O I：
10.1080/15421406.2012.701111
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In situ and real-time observation of 2-dimensional grazing incidence x-ray diffraction (2D-GIXD) during growth of pentacene thin films were carried out using a newly home-built portable vacuum deposition chamber using synchrotron radiation at SPring-8. Crystal growth and successive polymorphic transformation from thin film phase to bulk phase are clearly observed at room temperature and 75 degrees C. A distinct orientation of bulk phase characterized by tilted (001) plane is found in the grown thin films at room temperature.
引用
收藏
页码：18 / 21
页数：4
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