In situ X-ray investigations of thin film growth

被引：21
|
作者：
Baranov, AM
Mikhailov, IF
机构：
[1] Res Inst Vacuum Tech, Moscow 113105, Russia
[2] Kharkov State Polytech Univ, UA-310002 Kharkov, Ukraine
来源：
THIN SOLID FILMS | 1998年 / 324卷 / 1-2期
关键词：
in situ X-ray monitoring; magnetron sputtering; Rf-plasma-enhanced chemical vapour deposition;
D O I：
10.1016/S0040-6090(97)01207-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The results of the investigation of growth processes of metal films, amorphous silicon films and diamond-like carbon films by in situ X-ray monitoring of reflectivity at the wavelength 1.54 A were presented. The films were obtained by magnetron sputtering and rf-plasma-enhanced chemical vapour deposition. The growth rate, thickness, density and roughness of films were calculated from the time dependence of reflectivity. (C) 1998 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：63 / 67
页数：5
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