TRACE ANALYSIS OF HIGH-PURITY GALLIUM-ARSENIDE

被引：0

作者：

BEINROHR, E ^{[1
]}

MOCAK, J ^{[1
]}

BABINSKY, M ^{[1
]}

机构：

[1] ZAVOD SNP, ZIAR HRONOM, CZECHOSLOVAKIA

来源：

CHEMICKE LISTY | 1990年 / 84卷 / 11期

关键词：

D O I：

暂无

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

引用

页码：1176 / 1183

页数：8

共 50 条

[41] GALLIUM-ARSENIDE ON SILICON
FAN, JCC
[J]. VLSI SYSTEMS DESIGN, 1987, 8 (13): : 80 - 81
[42] APPLICATION OF ATOMIC-ABSORPTION SPECTROMETRY TO ANALYSIS OF THE HIGH-PURITY SUBSTANCES - ANALYSIS OF HIGH-PURITY INDIUM AND GALLIUM
ZELENTSOVA, LV
YUDELEVICH, IG
CHANYSHEVA, TA
[J]. IZVESTIYA SIBIRSKOGO OTDELENIYA AKADEMII NAUK SSSR SERIYA KHIMICHESKIKH NAUK, 1982, (01): : 132 - 136
[43] DEFECTING TO GALLIUM-ARSENIDE
不详
[J]. SCIENCE NEWS, 1984, 125 (20) : 312 - 312
[44] GALLIUM-ARSENIDE ELECTRONICS
GIBBONS, G
[J]. PHYSICS IN TECHNOLOGY, 1987, 18 (01): : 5 - 10
[45] GALLIUM-ARSENIDE CHIPS
ROBINSON, P
[J]. BYTE, 1984, 9 (12): : 211 - &
[46] OXYGEN IN GALLIUM-ARSENIDE
BOURGOIN, JC
STIEVENARD, D
DERESMES, D
ARROYO, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 284 - 290
[47] ELECTROABSORPTION OF GALLIUM-ARSENIDE
BOBYLEV, BA
KRAVCHENKO, AF
TEREKHOV, AS
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 6 (10): : 1635 - 1638
[48] GALLIUM-ARSENIDE DEVICES
MORKOC, H
[J]. SOLID STATE TECHNOLOGY, 1988, 31 (03) : 69 - 69
[49] ELECTROABSORPTION OF GALLIUM-ARSENIDE
KUSHEV, DB
SOKOLOV, VI
SUBASHIE.VK
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
[50] PHOTOREFLECTION OF GALLIUM-ARSENIDE
PIKHTIN, AN
TODOROV, MT
[J]. SEMICONDUCTORS, 1993, 27 (07) : 628 - 631