CHARACTERISTICS OF P-N-JUNCTIONS FABRICATED ON HG1-XCDXTE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：10
|
作者：
FAURIE, JP [1 ]
SIVANANTHAN, S [1 ]
LANGE, M [1 ]
DEWAMES, RE [1 ]
VANDEWYCK, AMB [1 ]
WILLIAMS, GM [1 ]
YAMINI, D [1 ]
YAO, E [1 ]
机构：
[1] ROCKWELL INT CORP,CTR SCI,THOUSAND OAKS,CA 91360
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 25期
关键词：
D O I：
10.1063/1.99561
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2151 / 2153
页数：3
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