ORIGIN OF VOID DEFECTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY

Characterization of defects in Hg-1-x CdxTe compound semiconductor is essential to reduce intrinsic and the growth-induced extended defects which adversely affect the performance of devices fabricated in this material system. It is shown here that particulates at the substrate surface act as sites where void defects nucleate during Hg-1-x CdxTe epitaxial growth by molecular beam epitaxy. In this study, we have investigated the effect of substrate surface preparation on formation of void defects and established a one-to-one correlation. A wafer cleaning procedure was developed to reduce the density of such defects to values below 200 cm(-2). Focal plane arrays fabricated on low void density materials grown using this new substrate etching and cleaning procedure were found to have pixel operability above 98.0%.