NEW ACHIEVEMENTS IN HG1-XCDXTE GROWN BY MOLECULAR-BEAM EPITAXY

被引：32
|
作者：
SIVANANTHAN, S
LANGE, MD
MONFROY, G
FAURIE, JP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期
关键词：
D O I：
10.1116/1.584332
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：788 / 793
页数：6
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