共 50 条
- [42] DEPOSITION OF HETEROEPITAXIAL LAYERS OF CADMIUM SELENIDE AND TELLURIDE ON INDIUM ARSENIDE [J]. INORGANIC MATERIALS, 1985, 21 (11): : 1714 - 1716
- [43] LOCAL IMPURITY INHOMOGENETIES IN VAPOR GROWN GALLIUM-ARSENIDE LAYERS [J]. IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1978, (10): : 96 - 101
- [44] CHARACTERIZATION OF CADMIUM-SULFIDE COLLOIDS IN REVERSE MICELLES [J]. COLLOIDS AND SURFACES, 1991, 61 : 175 - 188
- [46] DELAYED RELAXATION OF HIGH-TEMPERATURE CONDUCTIVITY IN CADMIUM-SULFIDE AND SELENIDE [J]. ZHURNAL NEORGANICHESKOI KHIMII, 1980, 25 (09): : 2587 - 2589
- [47] OBSERVATIONS OF CADMIUM-OXIDE WHISKERS GROWN ON CADMIUM-SULFIDE SINGLE-CRYSTALS [J]. DOKLADI NA BOLGARSKATA AKADEMIYA NA NAUKITE, 1982, 35 (03): : 311 - 313
- [48] HIGH-PERFORMANCE MESFETS IN MOCVD-GROWN GALLIUM-ARSENIDE ON SILICON [J]. ELECTRONICS LETTERS, 1988, 24 (16) : 1029 - 1030
- [49] FORMATION OF EPITAXIAL GALLIUM-ARSENIDE LAYERS FROM SOLUTION IN A BISMUTH MELT [J]. INORGANIC MATERIALS, 1984, 20 (01): : 7 - 10
- [50] PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL LAYERS OF GALLIUM-ARSENIDE [J]. INORGANIC MATERIALS, 1980, 16 (02): : 128 - 132