SELF-DIFFUSION OF GALLIUM IN GALLIUM-ARSENIDE

被引：58
|
作者：
PALFREY, HD
BROWN, M
WILLOUGHBY, AFW
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 10期
关键词：
D O I：
10.1149/1.2127222
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：2224 / 2228
页数：5
相关论文
共 50 条
  • [31] OXYGEN IN GALLIUM-ARSENIDE
    BOURGOIN, JC
    STIEVENARD, D
    DERESMES, D
    ARROYO, JM
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 69 (01) : 284 - 290
  • [32] ELECTROABSORPTION OF GALLIUM-ARSENIDE
    KUSHEV, DB
    SOKOLOV, VI
    SUBASHIE.VK
    [J]. SOVIET PHYSICS SOLID STATE,USSR, 1972, 13 (10): : 2488 - +
  • [33] GALLIUM-ARSENIDE DEVICES
    MORKOC, H
    [J]. SOLID STATE TECHNOLOGY, 1988, 31 (03) : 69 - 69
  • [34] PHOTOREFLECTION OF GALLIUM-ARSENIDE
    PIKHTIN, AN
    TODOROV, MT
    [J]. SEMICONDUCTORS, 1993, 27 (07) : 628 - 631
  • [35] GALLIUM-ARSENIDE TRANSISTORS
    FRENSLEY, WR
    [J]. SCIENTIFIC AMERICAN, 1987, 257 (02) : 80 - +
  • [36] GALLIUM-ARSENIDE ON SILICON
    SHICHIJO, H
    [J]. ELECTRONICS & WIRELESS WORLD, 1988, 94 (1628): : 609 - 609
  • [37] GALLIUM-ARSENIDE CHIPS IN
    MARTIN, D
    [J]. CHEMISTRY IN BRITAIN, 1992, 28 (03) : 211 - 212
  • [38] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS
    SCHERER, A
    BEEBE, E
    CRAIGHEAD, HG
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
  • [39] INVESTIGATION OF ALUMINUM GALLIUM-ARSENIDE GALLIUM-ARSENIDE SUPERLATTICES BY ATOMIC FORCE MICROSCOPY
    FRIEDBACHER, G
    HANSMA, PK
    SCHWARZBACH, D
    GRASSERBAUER, M
    NICKEL, H
    [J]. ANALYTICAL CHEMISTRY, 1992, 64 (17) : 1760 - 1762
  • [40] MECHANISM OF SELF-DISSOLUTION OF GALLIUM-ARSENIDE
    BELYAKOV, LV
    GORYACHEV, DN
    SRESELI, OM
    [J]. SOVIET ELECTROCHEMISTRY, 1983, 19 (06): : 720 - 722
12345