EFFECT OF COULOMB SCATTERING ON SILICON SURFACE MOBILITY

被引：52
|
作者：
CHENG, YC [1 ]
SULLIVAN, EA [1 ]
机构：
[1] BELL NO RES,OTTAWA,ONTARIO,CANADA
来源：
JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 01期
关键词：
D O I：
10.1063/1.1662957
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：187 / 192
页数：6
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