LOCAL FLUCTUATION OF ALLOY COMPOSITION IN INGAASP/GAAS LPE LAYERS

被引：1
|
作者：
KATO, T
MATSUMOTO, T
ISHIDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期
关键词：
D O I：
10.1143/JJAP.28.1513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1513 / 1514
页数：2
相关论文
共 50 条
  • [31] THE EFFECT OF GROWTH TEMPERATURE AND IMPURITY DOPING ON COMPOSITION OF LPE INGAASP ON INP
    KUSUNOKI, T
    AKITA, K
    KOMIYA, S
    NISHITANI, Y
    JOURNAL OF CRYSTAL GROWTH, 1982, 58 (02) : 387 - 392
  • [32] CHARACTERIZATION OF INGAASP/INP MULTIQUANTUM-WELL EPITAXIAL LAYERS GROWN BY LPE
    SASAI, Y
    OGURA, M
    KAJIWARA, T
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 309 - 309
  • [33] MANIFESTATIONS OF MELT-CARRY-OVER IN INP AND INGAASP LAYERS GROWN BY LPE
    MAHAJAN, S
    BRASEN, D
    DIGIUSEPPE, MA
    KERAMIDAS, VG
    TEMKIN, H
    ZIPFEL, CL
    BONNER, WA
    SCHWARTZ, GP
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C106 - C106
  • [34] Composition modulation and local structure in strained diluted GaInNAs nitride alloy thin layers on GaAs substrates.
    Metsue, Arnaud
    Priester, Catherine
    PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2006, 891 : 497 - +
  • [35] VARIATION OF THE THICKNESS AND COMPOSITION OF LPE INGAASP, INGAAS, AND INP LAYERS GROWN FROM A FINITE MELT BY THE STEP-COOLING TECHNIQUE
    COOK, LW
    TASHIMA, MM
    STILLMAN, GE
    JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 119 - 140
  • [36] EFFECT OF TEMPERATURE ON INGAASP ALLOY COMPOSITION
    LUM, RM
    MCDONALD, ML
    MACK, EM
    WILLIAMS, MD
    LEVKOFF, J
    JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1577 - 1581
  • [37] OUTDIFFUSION OF RECOMBINATION CENTERS FROM THE SUBSTRATE INTO LPE LAYERS - GAAS
    JASTRZEBSKI, L
    LAGOWSKI, J
    GATOS, HC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (12) : 2231 - 2234
  • [38] SUPPRESSION OF DEFECT FORMATION IN GAAS LAYERS BY REMOVING OXYGEN IN LPE
    ISHII, M
    KAN, H
    SUSAKI, W
    OGATA, Y
    APPLIED PHYSICS LETTERS, 1976, 29 (06) : 375 - 377
  • [39] HIGH-RESISTIVITY LPE LAYERS OF GAAS BY IRON DOPING
    KOJIMA, K
    HASEGAWA, H
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 62 (02): : 673 - 679
  • [40] INVESTIGATION OF THE FORMATION OF TRANSITION LAYERS DURING LPE GROWTH OF GAAS
    BRUK, AS
    GOVORKOV, AV
    MILVIDSKII, MG
    POPOVA, EV
    SHLENSKII, AA
    YUGOVA, TG
    SCANNING, 1993, 15 (06) : 333 - 337
12345