LOCAL FLUCTUATION OF ALLOY COMPOSITION IN INGAASP/GAAS LPE LAYERS

被引：1
|
作者：
KATO, T
MATSUMOTO, T
ISHIDA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 08期
关键词：
D O I：
10.1143/JJAP.28.1513
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1513 / 1514
页数：2
相关论文
共 50 条
  • [21] INFLUENCE OF OXYGEN IN AMBIENT GAS ON LPE GAAS LAYERS
    KAN, H
    ISHII, M
    SUSAKI, W
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1977, 16 : 461 - 464
  • [22] LPE GROWTH OF ALGAINAS EPITAXIAL LAYERS ON GAAS(100)
    SWARUP, P
    JAIN, RK
    VERMA, SN
    CHARAN, S
    TANDLE, DM
    JOURNAL OF CRYSTAL GROWTH, 1983, 63 (01) : 97 - 104
  • [23] CROSSHATCH PATTERN ON InGaAsP LAYERS GROWN ON GaAs0. 7P0. 3 SUBSTRATE BY LPE.
    Fujii, Sadao
    Susawa, Hiromoto
    Sakai, Shiro
    Umeno, Masayoshi
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1987, 26 (01): : 112 - 116
  • [24] DOPANT TRACING OF TERRACE GROWTH IN GAAS LPE LAYERS
    FISCHER, B
    BAUSER, E
    SULLIVAN, PA
    RODE, DL
    APPLIED PHYSICS LETTERS, 1978, 33 (01) : 78 - 80
  • [25] Operating characteristics of InGaAsP/GaAs SCH SQW high power lasers by LPE
    Gao, X
    Bo, BX
    Qu, Y
    Zhang, BS
    Wang, YX
    Wang, L
    Yang, LX
    Song, XW
    Zhang, XD
    SEMICONDUCTOR LASERS III, 1998, 3547 : 118 - 120
  • [26] MELTBACK OF GAAS0.6P0.4 SUBSTRATE IN LPE GROWTH OF INGAASP
    FUJII, S
    FURUTA, S
    SAKAI, S
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (01): : 79 - 81
  • [27] LPE growth of high-power InGaAsP/GaAs SCH SQW lasers
    Bo, BX
    Zhang, BS
    Zhu, BR
    Yang, ZH
    Ren, DC
    Zhang, XD
    SEMICONDUCTOR LASERS II, 1996, 2886 : 112 - 113
  • [28] CHARACTERIZATION OF INTERFACE INSTABILITY IN INGAASP LPE GROWTH ON GAAS BY FOURIER-ANALYSIS
    HIRAMATSU, K
    TANAKA, S
    SAWAKI, N
    AKASAKI, I
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1985, 24 (07): : 822 - 827
  • [29] CHARACTERIZATION OF INTERFACE INSTABILITY IN InGaAsP LPE GROWTH ON GaAs BY FOURIER ANALYSIS.
    Hiramatsu, Kazumasa
    Tanaka, Shigeyasu
    Sawaki, Nobuhiko
    Akasaki, Isamu
    1600, (24):
  • [30] The growth of InGaAsP InP MQW layers using a modified vertical LPE system
    Oh, SH
    Hwang, SK
    Hong, T
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 34 : S474 - S477
12345