RADIATIVE RECOMBINATION IN SILICON P-N JUNCTIONS

被引：51

作者：

MICHAELIS, W

PILKUHN, MH

机构：

来源：

PHYSICA STATUS SOLIDI | 1969年 / 36卷 / 01期

关键词：

D O I：

10.1002/pssb.19690360132

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

下载

页码：311 / +

页数：1

共 50 条

[21] p-n junctions in silicon nanowires
G. Goncher
R. Solanki
J. R. Carruthers
J. Conley
Y. Ono
Journal of Electronic Materials, 2006, 35 : 1509 - 1512
[22] RADIATIVE RECOMBINATION EFFICIENCIES IN GA(AS,P)-N AND (IN,GA)P-N
KLEIMAN, GG
JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 180 - 189
[23] TUNNEL EFFECTS IN DIFFUSED P-N JUNCTIONS IN GALLIUM ANTIMONIDE .2. RADIATIVE RECOMBINATION
STUCHERN.VM
YUNOVICH, AE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (09): : 78 - +
[24] ELECTRICAL PROPERTIES OF CARRIER GENERATION-RECOMBINATION CENTERS IN SILICON P-N JUNCTIONS
SATO, S
KAWAJI, S
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3779 - +
[25] RECOMBINATION RADIATION OF ALLOYED GAP P-N JUNCTIONS
MAMEDOVA, RF
NASLEDOV, DN
SLOBODCH.SV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (04): : 423 - &
[26] RECOMBINATION RADIATION OF P-N TUNNEL JUNCTIONS IN GAAS
IMENKOV, AN
KOZLOV, MM
MESKIN, SS
NASLEDOV, DN
RAVICH, VN
TSARENKO.BV
SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (02): : 504 - +
[27] ON MECHANISM OF RECOMBINATION RADIATION OF P-N JUNCTIONS IN GAAS
NASLEDOV, DN
TSARENKO.BV
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, S 21 : 302 - &
[28] RECOMBINATION RADIATION OF GALLIUM ANTIMONIDE P-N JUNCTIONS
KRYUKOVA, IV
PADUCHIK.LI
KARNAUKH.VG
SOVIET PHYSICS SOLID STATE,USSR, 1966, 8 (06): : 1538 - &
[29] RECOMBINATION PHOTOCURRENT FLUCTUATIONS ON ILLUMINATION OF P-N JUNCTIONS
MIRLIN, DN
KARPOV, YS
SOVIET PHYSICS-SOLID STATE, 1962, 4 (03): : 510 - 514
[30] LUMINESCENCE AND RECOMBINATION THROUGH DEFECTS IN P-N JUNCTIONS
MORGAN, TN
PHYSICAL REVIEW, 1965, 139 (1A): : A294 - &

← 1 2 3 4 5 →