INFLUENCE OF DEEP TRAPS ON MEASUREMENT OF FREE-CARRIER DISTRIBUTIONS IN SEMICONDUCTORS BY JUNCTION CAPACITANCE TECHNIQUES

被引：269

作者：

KIMERLING, LC ^{[1
]}

机构：

[1] BELL TEL LABS INC, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1839 / 1845

页数：7

共 50 条

[41] THE CAPACITANCE AND CHARACTERISTIC RELAXATION-TIMES AT CARRIER EXCLUSION IN COMPENSATED SEMICONDUCTORS WITH DEEP TRAPS AND NON-INJECTING CONTACTS
ARONOV, DA
MAMATKULOV, BR
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (01): : K85 - K89
[42] EFFECT OF NONPARABOLICITY ON FREE-CARRIER ABSORPTION IN SEMICONDUCTORS AT QUANTIZING MAGNETIC-FIELDS
WU, CC
TSAI, JS
LIN, CJ
JOURNAL OF APPLIED PHYSICS, 1990, 68 (06) : 3024 - 3026
[43] CONTACTLESS METHOD OF MEASURING FREE-CARRIER CONCENTRATION IN NARROW-BAND SEMICONDUCTORS
GALANOV, EK
POTIKHONOV, GN
SOVIET JOURNAL OF NONDESTRUCTIVE TESTING-USSR, 1982, 18 (01): : 68 - 72
[44] THEORY OF FREE-CARRIER MAGNETOABSORPTION IN MIXED ZINCBLENDE NARROW-GAP SEMICONDUCTORS
SZATKOWSKI, J
SIERANSKI, K
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 120 (01): : 263 - 272
[45] EFFECT OF STIMULATED FREE-CARRIER ABSORPTION ON 2-PHOTON PHOTOCONDUCTIVY IN SEMICONDUCTORS
DANISHEVSKII, AM
PATRIN, AA
RYVKIN, SM
YAROSHET.ID
SOVIET PHYSICS JETP-USSR, 1969, 29 (05): : 781 - +
[46] MULTI-PHOTON FREE-CARRIER ABSORPTION AT HIGH INTENSITIES IN POLAR SEMICONDUCTORS
JENSEN, B
PHYSICAL REVIEW B, 1981, 24 (10): : 5932 - 5948
[47] FREE-CARRIER ABSORPTION DUE TO IMPURITY SCATTERING IN ZERO-GAP SEMICONDUCTORS
GOETTIG, S
SOLID STATE COMMUNICATIONS, 1985, 55 (07) : 611 - 614
[48] A NEW C-V METHOD FOR DETERMINING FREE CARRIER AND DEEP TRAP DISTRIBUTIONS IN SEMICONDUCTORS
REMAKI, B
BALLAND, B
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (11): : 1381 - 1388
[49] EFFECT OF FREE-CARRIER SCREENING ON THE ULTRAFAST RELAXATION KINETICS IN HOT POLAR SEMICONDUCTORS
ALGARTE, ACS
PHYSICAL REVIEW B, 1985, 32 (04) : 2388 - 2392
[50] THE INFLUENCE OF FREE-CARRIER ABSORPTION ON THE RAPID THERMAL SINTERING PROCESS
ONISHI, S
SAKIYAMA, K
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) : 176 - 178

← 1 2 3 4 5 →