CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS

被引：256

作者：

ASPNES, DE

STUDNA, AA

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 04期

关键词：

D O I：

10.1063/1.92705

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：316 / 318

页数：3

共 50 条

[1] Chemical etching of group III-V semiconductors
Kadhim, NJ
Laurie, SH
Mukherjee, D
[J]. JOURNAL OF CHEMICAL EDUCATION, 1998, 75 (07) : 840 - 843
[2] WET-CHEMICAL ETCHING OF III-V SEMICONDUCTORS
KELLY, JJ
VANDENMEERAKKER, JEAM
NOTTEN, PHL
TIJBURG, RP
[J]. PHILIPS TECHNICAL REVIEW, 1988, 44 (03): : 61 - 74
[3] PLASMA ETCHING APPLIED TO III-V COMPOUND SEMICONDUCTORS.
Ibbotson, Dale E.
[J]. Vide, les Couches Minces, 1983, 38 (218):
[4] DOWNSTREAM PLASMA ACTIVATED ETCHING OF III-V COMPOUND SEMICONDUCTORS
IYER, R
LILE, DL
[J]. ADVANCES IN MATERIALS, PROCESSING AND DEVICES IN III-V COMPOUND SEMICONDUCTORS, 1989, 144 : 519 - 524
[5] CHEMICAL BEAM EPITAXY OF III-V COMPOUND SEMICONDUCTORS
TSANG, WT
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : C174 - C174
[6] REAL-TIME MONITORING AND ANALYSIS OF CHEMICAL WET ETCHING OF III-V COMPOUND SEMICONDUCTORS
CHAND, N
KARLICEK, RF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1993, 140 (03) : 703 - 705
[7] Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
Kamimura, Ryuichiro
Furuta, Kanji
[J]. IEICE TRANSACTIONS ON ELECTRONICS, 2017, E100C (02): : 150 - 155
[8] Wet etching of III-V semiconductors
Gomes, WP
[J]. PROCESSING AND PROPERTIES OF COMPOUND SEMICONDUCTORS, 2001, 73 : 215 - 295
[9] CHEMICAL TRENDS FOR NATIVE DEFECTS IN III-V COMPOUND SEMICONDUCTORS
POTZ, W
FERRY, DK
[J]. PHYSICAL REVIEW B, 1985, 31 (02) : 968 - 973
[10] PASSIVATION OF III-V COMPOUND SEMICONDUCTORS
VIKTOROVITCH, P
[J]. REVUE DE PHYSIQUE APPLIQUEE, 1990, 25 (09): : 895 - 914

← 1 2 3 4 5 →