CHEMICAL BEAM EPITAXY OF III-V COMPOUND SEMICONDUCTORS

被引：0

|

作者：

TSANG, WT ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C174 / C174

页数：1

相关论文

共 50 条

[1] MOLECULAR-BEAM EPITAXY FOR III-V COMPOUND SEMICONDUCTORS
TSANG, WT
SEMICONDUCTORS AND SEMIMETALS, 1985, 22 : 95 - 207
[2] Molecular beam epitaxy technology of III-V compound semiconductors for optoelectronic applications
Cheng, KY
PROCEEDINGS OF THE IEEE, 1997, 85 (11) : 1694 - 1714
[3] THIN PHASE EPITAXY OF III-V COMPOUND SEMICONDUCTORS
SEBESTYEN, T
ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE, 1979, 47 (1-3): : 51 - 67
[4] COMPARISON OF LIQUID-PHASE EPITAXY AND CHEMICAL VAPOR EPITAXY OF III-V COMPOUND SEMICONDUCTORS
MINDEN, HT
SOLID STATE TECHNOLOGY, 1973, 16 (01) : 31 - 38
[5] MOLECULAR-BEAM EPITAXY OF III-V SEMICONDUCTORS
WICKS, GW
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1993, 18 (03) : 239 - 260
[6] EPITAXY OF III-V SEMICONDUCTORS
BALK, P
BRAUERS, A
GRUTZMACHER, D
KAYSER, O
WEYERS, M
CANADIAN JOURNAL OF PHYSICS, 1991, 69 (3-4) : 370 - 377
[7] EPITAXY OF SEMICONDUCTORS III-V
MIRCEA, A
VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (225): : 33 - 45
[8] REACTION MODELS FOR THE EPITAXIAL-GROWTH OF III-V SEMICONDUCTORS BY CHEMICAL BEAM EPITAXY
FOORD, JS
FRENCH, CL
LEVOGUER, CL
DAVIES, GJ
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1993, 344 (1673): : 507 - 520
[9] Metalorganic molecular beam epitaxy/etching of III-V semiconductors
Gonda, S
Asahi, H
Yamamoto, K
Hidaka, K
Sato, J
Tashima, T
Asami, K
APPLIED SURFACE SCIENCE, 1998, 130 : 377 - 381
[10] Molecular beam epitaxy and properties of ferromagnetic III-V semiconductors
Ohno, H
JOURNAL OF CRYSTAL GROWTH, 2003, 251 (1-4) : 285 - 291

← 1 2 3 4 5 →