CHEMICAL BEAM EPITAXY OF III-V COMPOUND SEMICONDUCTORS

被引：0
|
作者：
TSANG, WT [1 ]
机构：
[1] AT&T BELL LABS,HOLMDEL,NJ 07733
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 04期
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D O I：
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：C174 / C174
页数：1
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