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- [5] SURFACE STOICHIOMETRY AND MORPHOLOGY OF MBE GROWN (001)GAAS THROUGH THE ANALYSIS OF RHEED OSCILLATIONS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L478 - L480
- [9] EFFECT OF GROWTH-CONDITIONS ON STOICHIOMETRY IN MBE-GROWN GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 753 - 755