共 50 条
- [41] ELECTRICAL-PROPERTIES OF OVAL DEFECTS IN GAAS GROWN BY MBE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L371 - L373
- [46] MBE-grown Fe nanowires on a ZnS(100) surface JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) : 2208 - 2211
- [47] THE EFFECTS OF ARSENIC SOURCE CONTAMINATION ON DOPED GAAS GROWN BY MBE APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 35 (02): : 75 - 77